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KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C

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KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C

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Brand Name : KACISE

Model Number : KSGYR111M-S

Certification : CE

Place of Origin : CHINA

MOQ : 1PCS

Supply Ability : 1000 Piece/Pieces per Week negotiable

Delivery Time : 5-8work days

Packaging Details : each unit has individual box and all boxes are packed in standard packages or customers requests available

Supply voltage VDDM : +2.7V~+3.6V

Bias ZRL : ±1°/s (0 LSB Typ)

Rate range I : ±400°/s

Non-linearity NI : ±0.5%FS

Cross-axis sensitivity CS : ±5%

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KSGYR111M-S Digital Quartz MEMS GYRO Chip
Product Introduction
The KSGYR111M-S feature superior bias output stability and low noise. Digital quartz gyroscope is based on quartz MEMS technology and completed by semiconductor processing technology.
In addition to compatibility for digital output interfaces (SPI, I2C), these sensors allow for independent interface power supply voltage settings to enable communications with various interfaces. User-selectable low-pass filters and high-pass filters enable a wide range of cut-off frequencies. Designed for low power consumption, these sensors are suitable for a wide range of uses, from wearable devices and other consumer electronics to industrial equipment.
Feature
● Excellent bias temperature coefficient 0.0016 (°/s)/°C Typ
● Low angle random walk 0.065 °/√h Typ
● Integrated user-selectable digital filter and detuning frequency eliminate filter
● SPI or I2C serial interface
● Angular rate output (16 bits or 24 bits resolution)
● Operating temperature -20 °C to +80 °C
● Embedded temperature sensor
● Low current consumption 900 μA Typ
Application
● Anti-vibration and attitude control for industrial applications etc
● Motion detection for human machine interface
● Wearable devices
● Medical motion detection equipment
● Optical, photography and other platforms stable
● Inertial measurement instruments

KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C

Technical Specifications

Parameter

KSGYR111M-S

Explanation

Power supply parameter

Supply voltage VDDM

+2.7V~+3.6V

Supply voltage for interface VDDI

+1.65V~+3.6V

Product performance

Scale factor So

70 LSB/(°/s) ±2%

16 bits,Ta=+25℃

17920 LSB/(°/s) ±2%

24 bits,Ta=+25℃

Scale factor variation over temperature Spt

±3%

VDDM=3V,Ta=+25℃ reference

Bias ZRL

±1°/s (0 LSB Typ)

Ta=+25℃

Bias variation over temperature A ZRLta

±0.25°/h

-10℃~+50℃,Ta=+25℃ reference

Bias variation over temperature B ZRLtb

±1°/h

-20℃~+80℃,Ta=+25℃ reference

Bias temperature coefficient ZRLs

0.0016(°/s)/℃ (Typ)

VDDM = 3v,Average of absolute value,ΔT=1℃

Rate range I

±400°/s

Non-linearity NI

±0.5%FS

Ta=+25℃

Cross-axis sensitivity CS

±5%

Ta=+25℃

Current consumption Iop1

900μA Typ

Sleep current Iop3

3μA Typ

Noise density Nd

0.0015 (°/s)/√Hz

@ 10Hz, LPF default setting

Angle random walk N

0.065 °/√h

Environment

Operating temperature TOPR

-20℃～+80℃

Storage temperature TSTG

-40℃～+85℃


Dimensions

Unit:mm

KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C


Product Tags:

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KSGYR111M-S Digital MEMS Gyro Chip ±400°/s SPI I2C Images

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